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Master thesis: Optical properties of shallow dopants in monolayer transition metal dichalcogenides

January 24th, 2018


Monolayers of transition metal dichalcogenides (TMDs) consisting of a single layer of transition meta atoms (Mo,W) sandwiched between single layers of chalcogen atoms (S,Se) have been shown to be direct bandgap semiconductors with unique properties. Their lattice symmetry, combined with the presence of heavy constituent atoms results in strong spin-orbit interactions and leads to the coupling of spin- and valley- degrees of freedom. Monolayers of TMDs interact strongly with light. The spinvalley index is coupled to handedness of photon polarization which means that it should be possible to address such qubits on a single photon level.

Objective: In this research project we introduce dopant atoms into TMDs by unique very low energy ion implantation. We incorporate them into simple devices to vary electron concentration and perform optical measurements at cryogenic temperatures. In particular, we will investigate coupling of light to states bound on dopant atoms and their response to photons of different polarization in order to identifying a suitable candidate dopant for single spin-photon conversion. The project will involve the preparation of samples for implantation, as well as fabrication of devices in the clean room. Measurements will be performed using confocal optical techniques with sample cooled with liquid

Project suitable for students from the departments of Physics, Electrical Engineering and Material Science.

For further information and to apply please contact: Prof. Beata Kardynal: