Geräteliste
An up-to-date equipment list and data such as location and tool owners is available within the PPMS Booking Tool
Process | Tool | Description |
Electron-Beam Lithography | Vistec EBPG 5000+ Service only | 100keV, up to 150 mm, res. > 15 nm, overlay 0.5 nm +/- 2.5 nm |
Raith EBPG 5200 Service only | 100keV, up to 200 mm, res. > 10 nm, overlay 0.5 nm +/- 2.5 nm | |
Aligner Lithography | Süss MJB4 | front side alignment, MFS ≈ 1 micron, overlay < 0.5 micron, lamp: 350 W (Hg), max. sample size 100 mm |
Süss MA8/BA8 | front and back side alignment, MFS ≈ 0.3 micron, overlay 0.25 micron, lamp: 1 kW (Hg), max. sample size 200 mm | |
Süss MA6 | front side alignment, MFS ≈ 1 micron, overlay ≈ 1 micron, lamp: 350 W (Hg), max. sample size 100 mm | |
Maskless Lithography | Heidelberg Instruments DWL 66+ | front and back side alignment, grayscale exposure mode, laser: 375 nm, MFS > 0.6 micron, overlay < 0.5 micron, max. sample size 200 mm |
Heidelberg Instruments MLA 100 | front side alignment, laser: 365 nm, MFS ≈ 1 micron, overlay < 1 micron, max. sample size 150 mm | |
| Heidelberg Instruments MLA 100 | front side alignment, laser: 365 nm, MFS ≈ 1 micron, overlay < 1 micron, max. sample size 200 mm |
Heidelberg Instruments NanoFrazor Explore | tip mode: [MFS > 15 nm, overlay 25 nm, gray scale possible]; laser mode: [MFS > 0.6 micron, overlay 100 nm]; max. sample size 200 mm, max. write field 60x60 micron2 | |
3D Printer | Nanoscribe Photonic Professional GT2 | xy-res. > 0.5 micron, z-res. > 1 micron, max print volume 100 mm3, max. object height 8 mm |
Nano-Imprint | Nanonex NX 2000 | MFS ≈ 30 nm, overlay (via Süss MA6) ≈ 1 micron, max. sample size 100 mm |
Dry Etching | Oxford PLS 100 Cluster tool | Up to 150 mm, load lock, only CMOS |
Oxford PLS 100 Cluster tool | Up to 200 mm, load lock, only CMOS | |
Oxford PL 100 / ICP | Up to 150 mm, load-lock, Gas species: Ar;O2;CF4;Cl2;HBr;CH4;BCL3 | |
Oxford PL 100 / ICP | Up to 150 mm, Load lock, only Si-based materials, Gas species: Ar, O2, H2, SF6, CHF3, Cl2 Bosch and Cryo process for deep silicon etching … | |
Oxford PL 100 / ICP | Up to 150 mm, load lock, Gas species: Ar, O2, CF4, Cl2, HBr | |
| Oxford RIE/ALE | Up to 200 mm, load lock, III/V Gas species: Ar;O2;SF6;CHF3;CF4;CL2;H2;BCl3;CH4;He |
| Oxford RIE/ALE | Up to 200 mm, load lock, only CMOS Gas species: Ar;O2;SF6;CHF3;CF4;HBr;CL2;H2;C4F8;CH4;He |
| TePla Gigabatch 360 | Resist stripping, N2, O2, CF4, up to 150 mm |
TePla Gigabatch 360 Coming May 2022 | Resist stripping, N2, O2, CF4, up to 150 mm | |
Deposition | Balzers PLS 500 Service only | Up to 3 x 100 mm, load lock, Ar-cleaning in load lock, 6 crucibles, different metals |
Balzer PLS 570 Service only | Up to 5 x 150 mm, load lock, Ar - Cleaning, 6 crucibles, metals: Al, Au,Ti, Pt, Ag, Cr, for bio-inspired systems | |
Leybold Univex 400 Service only | Up to 100 mm, Ar-Cleaning in load lock, 8 crucibles | |
Oerlikon EVO 2 | Up to 200 mm, CMOS only, DC/RF-Sputtering, three sources parallel, Al, Ti, TiN, Ta, Ni, TaN, insulators | |
Oxford PLS 100 PECVD | up to 200 mm, load lock, SiO2, SiNx, LR- and RF-plasma nodes | |
Sentech PECVD | Up to 200 mm, load lock, SiO2, SiNx, low temperature deposition (100oC < T > 350oC) | |
Aixtron Tricent Cluster CVD Service only | SiGe epitaxy for 300 mm | |
Aixtron Tricent Cluster CVD Service only | SiGeSn epitaxy for 300 mm | |
Aixtron Tricent Cluster ALD Service only | High-k, HfO2, Al2O3, HfyAl(1-y)Ox, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm | |
Aixtron Tricent Cluster AVD Service only | Metal gate AVD, TiN, TaN, for wafers 300 mm, 200 mm, 100 mm'; pieces 19,5 x 19,5 mm | |
| Centrotherm LPCVD Service only | Si3N4 low stress, TEOS for Wafers 200mm |
| FHR Sputter Service only | 4”, for III/V, substrate temperatur up to 800oC, single and co-sputtering, TiN;TiAlN;Nb;Pt;Al |
Oxford ALD | TaOx, Al2O3, for Si with Au, up to 150 mm | |
| Oxford ALD | Oxides für Quantum devices |
Dicing | Disco DAD3350 Service only | Si, glass, Al2O3, ceramics, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle – only in service |
Disco DAD3350 Service only | Si, glass, Al2O3, ceramics, up to 200 mm and thickness of 1.5 mm, no II/V-materials, 2" spindle – only in service | |
Süss Scriber | Up to 100 mm, for GaAs- | |
Wet Benches | Full wet bench line for Si processing | Wet benches for Preclean, Cleaning S1/S2, RCA, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm |
Full wet bench line for III/V processing | Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 150 mm | |
Full wet bench line for Biohybrids and not semiconductor materials | Wet benches for Preclean, Cleaning, Resist coating (incl. HDMS), Development, Solvents, Lift off, wet etching, up to 200 mm | |
Four Wet benches for Precleaning and Etching of "special materials" | Two benches for cleaning and etching with acids and bases, two wet benches for handling solvents, up to 200 mm | |
Wet bench mask making chrom masks | Two wet benches for developing and etching chrom masks, up to 200 mm | |
| Süss RCD-8 + Wet bench for development Service only | Semi-automatic spinner, up to 200 mm |
Wafer Cleaner | Semitool wafer cleaner | 2 reactors for 200 mm and 2 reactors for 300 mm, CMOs only |
Semisolar mask cleaner 5" | for mask up to 5” | |
CPD critical point dryer | Tousimis 931 series | up to 2,5" |
Implanter | Axcelis Optima Service only | Up to 300mm, 200ev-60Kev, B, BF2, P, As, Si, H, H2, only Si |
Eaton NV 3204 Service only | Up to 100 mm, 20-200 KeV | |
Thermal processing | UniTemp RTP 150 | Rapid Thermal Processing for Si, SiGe,etc. Gas Species: N2, H2, O2, Ar, max 1000oC, up to 100 mm |
UniTemp RTP 150 | Rapid Thermal Processing for III/V, Gas Species: N2, H2, O2, Ar, max 1000oC, up to 150 mm | |
UniTemp RTP 150 | coming in Mai 2022 | |
Tempress horizontal furnace Service only | Wet and dry thermal oxidation of Si, up to 100 mm, 800 - 1100oC | |
Tempress horizontal furnace Service only | Wet and dry thermal oxidation of silicon and metals, up to 100 mm, 450 - 1100oC | |
Tempress horizontal furnace Service only | Dry thermal oxidation of Si, up to 100 mm, 800 - 1100oC | |
Mattson ST 2000 Service only | Rapid thermal Processing for Si, Gas species: N2O, O2, H2, Ar, N2, max 1050oC, for 150 mm Si | |
Centrotherm CLV, vertical furnace | up to 200 mm, Gas species: N2, N2O, H2, O2, DCE, max 1050oC | |
Centrotherm CLV, vertical furnace | up to 200 mm, Gas species: N2, H2, O2, DCE, max 1050oC | |
Analytic | FEI Magellan, scanning electron microscope Service only | High resoluition SEM for electron energies below 5 KeV, Energy dispersive X-rax analasis |
FEI Helios FIB + EBID | Focused Ion Beam, EBID for PT, Au, SiO2, Ir, Cryo stage for biological applications | |
Zeiss 1550 Scanning Electron Microscope | General purpose SEM, Gemini column, up to 30keV | |
Zeiss 1550 VP Scanning Electron Microscope | General purpose SEM, Gemini column, up to 30keV | |
Zeiss Sigma 300 with 4 Nano-Manipulators | General purpose SEM, Gemini column, up to 30keV | |
SenTech SE800 spectroscopic ellipsometer | Up to 300 mm, mapping | |
Accurion nanofilm RSE, fast spectroscopic ellipsometer | Up to 100 mm, mapping | |
Accurion nanofilm EP4, imaging ellipsometer | Up to 100 mm, mapping | |
Bruker Dektak 150, Surface profiler | 2 nm vertical resolution | |
Bruker Dektak XT, mapping profiler | 2 nm vertical resolution | |
Bruker AFM | up to 100 mm | |
RBS Tandetron Service only | H+ up to 3,1 MeV, He++ up to 5,1 MeV | |
Leitz INM 100 Microscope | optical microscope | |
Leitz INM 300 Microscope | UV- optical microscope | |
Confovis Confocal Mikroscope | wafer inspect |